Kioxia Corporation, a global leader in memory solutions, has announced that several of its research papers have been selected for presentation at the prestigious IEEE International Electron Devices Meeting (IEDM) 2024. The conference, which takes place from 7th to 11th December in San Francisco, USA, is a key platform for innovators in the semiconductor industry to present groundbreaking technologies.
Kioxia is renowned for its pioneering work in semiconductor memory, including its cutting-edge three-dimensional (3D) flash memory, BiCS FLASH™. The company is at the forefront of research in emerging memory solutions, contributing to the advancement of AI, digital transformation, and next-generation computing systems. Its latest research focuses on enhancing the performance of memory devices used in everything from artificial intelligence to 5G communication systems and the Internet of Things (IoT).
At IEDM 2024, Kioxia will present new technologies across three key memory layers within the semiconductor memory hierarchy: DRAM, storage class memory (SCM), and 3D flash memory. These advancements are expected to significantly improve the speed, efficiency, and capacity of future memory systems.
Oxide-Semiconductor DRAM Technology
One of Kioxia’s most promising developments is the Oxide-Semiconductor Channel Transistor DRAM (OCTRAM), created in partnership with Nanya Technology. This new type of DRAM features a vertical transistor, designed to improve circuit integration and reduce power consumption. The technology, which harnesses the properties of oxide semiconductors, minimises current leakage and could play a crucial role in lowering power usage in AI, post-5G systems, and IoT applications.
Kioxia’s paper titled Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture (Paper Number: 6-1) will explore the potential of this technology to revolutionise DRAM by offering enhanced performance with reduced energy consumption.
High-Capacity MRAM for SCM Applications
Kioxia has also made significant progress in magnetic random-access memory (MRAM), working alongside SK hynix Inc. to develop high-capacity MRAM suitable for SCM applications. The joint development achieved a cell read/write operation at an unprecedented 20.5-nanometre scale, the smallest ever for MRAM. To address the challenges of maintaining memory reliability at such a small scale, the companies developed a novel readout method, reducing the parasitic capacitance in circuits.
This advancement has potential applications in AI and big data processing, where both speed and capacity are essential. Kioxia’s paper on this technology is titled Reliable memory operation with low read disturb rate in the world’s smallest 1Selector-1MTJ cell for 64 Gb cross-point MRAM (Paper Number: 20-1).
Next-Generation 3D Flash Memory
In the area of 3D flash memory, Kioxia has developed a new stacking structure to prevent the degradation of performance as more layers are added. Unlike conventional vertical stacking, Kioxia’s new design arranges NAND-type cells horizontally, offering greater reliability, higher bit density, and lower production costs. This innovation could lead to more efficient and cost-effective solutions for data storage.
The research paper on this technology is titled Next-Generation 3D Memory Technology with Horizontal Cell Stacking Structure, and it will be presented as part of the IEDM conference.
With these advancements, Kioxia is positioning itself at the forefront of memory technology, addressing the growing demand for faster, more efficient, and reliable storage solutions in an increasingly data-driven world.
For more details on IEDM, please visit: https://www.ieee-iedm.org/
